Global Automotive GaN Devices Market Size To Grow At 14% CAGR From 2024 to 2030

Automotive GaN Devices Market Size (2024 - 2030)  

As per our research report, the global automotive GaN devices market size is estimated to be growing at a CAGR of 14% from 2024 to 2030.

GaN stands for Gallium Nitride. It is a technically advanced third-band gap semiconductor device. This type of device is suitable for high-power transistors. It can also operate at high temperatures. The primary properties of the GaN-based device are large electric fields, increased energy efficiency, higher saturation velocity, breakdown voltage, and thermal conduction. GaN is increasingly becoming popular in the automotive sector because of the above-mentioned advantages. The rising popularity of electric vehicles is a major booster for the GaN market.

Since China is a major export hub for the raw materials used to create smartphones, tablets, and other electronic gadgets, the COVID-19 pandemic has had a significant impact on the semiconductor sector. Production of smartphones, tablets, and other consumer electronics gadgets has decreased due to a slowdown in manufacturing. Manufacturers of consumer electronics have also postponed the release of new products due to the rapid spread of the COVID-19 pandemic. The losses from the pandemic and the disruptions to the supply chain are preventing the market from growing. Due to travel restrictions and office closures brought on by government lockdowns worldwide, the COVID-19 epidemic has negatively impacted the GaN-based power device industry.

The market for automotive GaN devices is expected to increase as a result of the increasing demand for electric vehicles globally. Given that the majority of automotive applications fall into the medium-voltage (200–800V) gaN spectrum, GaN is now the best option in terms of performance, efficiency, and quality. It is projected that demand for GaN semiconductor devices would increase in particular in the areas of control systems, motor drives, brake systems, lighting and displays, and electronic systems in EVs and HEVs.

The second factor that governs the growth of this market is the suitability of GaN devices in RF applications. GaN semiconductors' ability to generate high power amplification at extraordinarily high-frequency ranges has helped them gain traction in the RF power semiconductor market. The advent of monolithic GaN MMICs has further accelerated the uptake of GaN RF applications.

The automotive GaN devices market expansion may be constrained by the complications associated with GaN electronics. The design of GaN power and radiofrequency devices is challenging for various reasons, such as current collapse and charge entrapment. Increasing efficiency while lowering the structure's cost and complexity is the key challenge faced by designers. The different needs of different applications further add to the design complexity of power and radio frequency devices. The rising demand for GaN devices with different packaging and features has led to more unique circuit designs and accompanying thermal concerns.

Significant technological advancements in the semiconductor industry, the creation of small GaN semiconductor devices, and the growing use of GaN semiconductors in the automotive sector are driving the market. Innovation and technical progress will continue to be major factors in the growth of the GaN semiconductor device market over the projection period. The growing emphasis on the production of renewable energy and the increased demand for LEDs in the consumer electronics and automotive industries are two more factors that have fueled the market's rise.


  • Based on device type, the Opto-semiconductors sector is the dominating segment in the global automotive GaN devices market. This is also the fastest-growing segment. This is because of the growing use of these semiconductors for car lights, interior and outdoor illumination, and pulse-powered laser systems. The growing need for ADASs worldwide offers a possible opportunity for players in the opto-semiconductors market. For example, U.S. and EU rules mandate that all new cars have autonomous emergency braking and forward-collision warning systems.

  • Based on components, the Power IC sector is the dominating segment in the global automotive GaN devices market. This is also the fastest-growing segment. GaN-based power integrated circuits (ICs) are becoming more and more essential due to their capabilities, which include real-time air traffic control, efficient navigation, and collision avoidance. Leading manufacturers are also working hard to enhance power integrated circuits (ICs) for usage in automotive and telecom applications, which is driving up demand for these chips in the industry.

  • Based on wafer size, the 6-inch category is the dominating segment in the global automotive GaN devices market. This is also the fastest-growing category. This may be due to the advantages of 6-inch GaN semiconductors, which are becoming more and more popular in defense equipment, wireless cellular base station power amplifiers, and car accident avoidance technologies. These advantages include accurate current regulation and a uniform voltage supply.

  • Based on application, power drives are the dominating segment in the global automotive GaN devices market. This is also the fastest-growing segment. Growing renewable energy generation, higher EV charging and adoption, and growing consumer awareness are the primary factors driving the growth of the GaN semiconductor device market.

  • Based on region, North America is the largest segment in the global automotive GaN devices market. This is because of increased internet usage, widespread smartphone adoption, and rising R&D expenditure on Aerospace and Defense. Asia Pacific is considered to be the fastest-growing region in this market. In a number of application areas, such as consumer and enterprise, telecommunications, automotive, industrial, etc., GaN devices are progressively replacing their silicon counterparts in the Asia Pacific region.

  • Companies playing a leading role in the global automotive GaN devices market profiled in this report are Efficient Power Conversion Corporation, NexGen Power Systems Inc., NXP Semiconductor N.V., Cree, Inc., Qorvo, Texas Instruments Inc., Fujitsu Ltd., GaN Systems Inc., Infineon Technologies AG, Freescale Semiconductor Inc., Toshiba Corporation.


By Device Type:

  • Opto-semiconductors

  • Power Semiconductors

  • RF Semiconductors

By Component:

  • Power IC

  • Power Transistors

  • Diodes & Rectifiers

  • Power Discretes

By Wafer Size:

  • 2 Inches

  • 4 Inches

  • 6 Inches

  • 8 Inches

By Application:

  • Lighting and Lasers

  • Radio Frequency

  • Power Drives

 By Region:

  • North America 

  • Europe

  • Asia Pacific

  • South America

  • Middle East and Africa

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