GLOBAL AUTOMOTIVE GAN DEVICES MARKET SIZE (2023 -2030)

As per our research report, the global Automotive GaN Devices market is projected to grow at a CAGR of 14% from 2023 - 2030.

The market is being driven by significant technological developments in the semiconductor industry, the development of compact GaN semiconductor devices, and the expanding usage of GaN semiconductors in the automobile industry. During the projection period, technological advancement and innovation will continue to play a significant role in the market growth of GaN semiconductor devices. Other factors that have contributed to the market expansion include the expanding focus on renewable energy generation and the rising demand for LEDs in the automotive and consumer electronics industries.

Industry Overview:

Wide-bandgap semiconductor gallium nitride (GaN) has a stronger breakdown strength, a faster switching rate, and better thermal conductivity. The market for gallium nitride semiconductor devices is expanding due to several causes, such as internet service providers' increased focus on implementing high-capacity and low-latency networks employing optical cables. As a result, there will be an increase in the need for power semiconductors and energy-efficient GaN components in wired communications. GaN semiconductor sales are anticipated to increase because they are employed in 5G infrastructure. Gallium nitride semiconductors are anticipated to be essential in modern sensor applications, power switching, and RF power. Additionally, businesses that are active in the current market for GaN semiconductor devices are principally concentrated on commercializing GaN semiconductor devices and expanding the adoption of cutting-edge innovations. The need for greater energy efficiency has changed the semiconductor industry, and as a result, the demand for GaN semiconductor devices is expected to increase soon. The market for GaN semiconductor devices is anticipated to see advancements and discoveries focused on increasing energy efficiencies because the power supply is a crucial part of the electronic ecosystem.

COVID-19 pandemic impact on Automotive GaN Devices Market

The COVID-19 pandemic has had a substantial influence on the semiconductor industry since China serves as a major export center for the raw ingredients used to make smartphones, tablets, and other electronic devices. There has been a slowdown in the manufacturing of smartphones, tablets, and other consumer electronics devices, which has reduced production. Because of the COVID-19 epidemic's rapid spread, consumer electronics manufacturers have also delayed the introduction of new devices. The supply chain's disruptions and the pandemic's losses are impeding the market's expansion. The COVID-19 outbreak has had a detrimental effect on the GaN-based power device business, primarily because lockdowns imposed by governments around the world led to the closure of offices and travel restrictions.

MARKET DRIVERS:

The market is being driven by soaring demand for EVs and hybrid electric vehicles

Sales of GaN semiconductor devices would increase due to the increase in EV demand globally. GaN is currently the preferred option in all aspects—performance, efficiency, and quality—as most automotive applications are in the medium-voltage range (200-800V) of GaN. In particular, the categories of control systems, motor drives, brake systems, lighting, and displays, and electronic systems in EVs and HEVs are anticipated to lead to a rise in demand for GaN semiconductor devices. One of the recently created GaN power semiconductor devices that is being used in EVs and HEVs include DC-DC converters, electric motors, and inverters in various car body parts such as mechanical systems, battery systems, and cooling systems.

The market growth is being driven by GaN's suitability in RF applications

The market for GaN semiconductor devices is primarily driven by the RF semiconductor device industry, which has enormous demand. Depending on the application, the RF sector, which is closely tied to the communications sector, calls for electronic devices to function at a variety of communication frequency ranges. GaN semiconductor devices have gained ground in the market for RF power semiconductor devices because of their capacity to produce high power amplification at extremely high-frequency ranges. The adoption of GaN RF applications has been further pushed by the introduction of monolithic GaN MMICs.

MARKET RESTRAINTS:

The increased expense of producing pure gallium nitride could limit market expansion

The cost of producing pure gallium nitride is higher than that of silicon carbide, which has been a popular semiconductor material for high-voltage power electronics for ten years, and this is one of the main barriers to the growth of the global market for GaN semiconductor devices. The price of the substrate, fabrication, packaging, support electronics, and development are only a few of the expenses associated with making GaN devices. One of the biggest obstacles to the commercialization of GaN-based devices is thus their high cost. Although generating GaN in large quantities can help address these problems, there is currently no widely used technique for doing so because it needs high operating pressures and temperatures, poor material quality, and limited scalability.

The complexities associated with the electrical arrangement of GaN devices may limit market expansion

GaN power and RF device design are complicated for several reasons, including charge entrapment and current collapse. The main difficulty for designers is to increase efficiency while minimizing the cost and complexity of the structure. The design complexity of the power and RF devices is further increased by the various requirements of various applications. There are now more unique circuit designs and thermal issues associated with these designs as a result of the increased demand for GaN devices with various packaging and characteristics. Additionally, because GaN devices are smaller than Silicon devices in size, it is crucial to reduce errors in electron mobility, current conductance, and power output. For a variety of applications, including automotive, aerospace, and defense applications, the reliability requirements of diverse GaN power devices are getting more difficult. Power equipment would need more and even brand-new reliability testing techniques to address these problems.

Silicon Carbide (SiC) is a more effective substitute for high-voltage semiconductor applications

For several power applications, including power rectification, power factor correction, power amplification, and power transmission, SiC offers improved power efficiency and sophisticated power handling capacity. SiC is the ideal substitute for silicon in high-voltage power applications because it offers cutting-edge characteristics that far outperform those of pure silicon, including power efficiency at high voltages, flexibility in power rectification, high reliability, and power amplification, and power factor correction. Although GaN has many advantages over SiC, including higher power efficiency, it is unable to operate as well as SiC at high voltage ranges (over 1 kV). SiC material is the superior choice for high-voltage power semiconductor devices because it has greater inherent toughness and extreme hardness than other materials.

AUTOMOTIVE GAN DEVICES MARKET REPORT COVERAGE:

This research report on the Automotive GaN Devices market has been segmented based on Device Type, Component, Wafer Size, Application, and region.

Automotive GaN Devices Market – By Device Type

• Opto-semiconductors

• Power Semiconductors

• RF Semiconductors

Based on Device Type, the Automotive GaN Devices Market is categorized into Opto-semiconductors, PowerSemiconductors, and RF Semiconductors. The category with the most revenue in 2021 was Opto-semiconductors. The market expansion in this sector is being driven by an increase in the use of these semiconductors in the automotive industry for pulse-powered laser systems, vehicle lights, and indoor and outdoor lighting. For market participants in Opto-semiconductors, the increasing demand for ADASs on a global scale presents a potential opportunity. For instance, all new vehicles must be equipped with forward-collision warning systems and autonomous emergency braking systems according to U.S. and EU regulations.

Automotive GaN Devices Market – By Component

• Power IC

• Power Transistors

• Diodes & Rectifiers

• Power Discretes

Based on Components, the Automotive GaN Devices Market is categorized into Power ICs, Power Transistors, Diodes & Rectifiers, and Power Discretes. The bulk of gallium nitride semiconductor devices are produced by the power IC category, and this dominance is anticipated to continue for the foreseeable future. Due to their capabilities, such as collision avoidance, effective navigation, and real-time air traffic control, GaN-based power ICs are becoming more and more necessary. Additionally, leading manufacturers are putting a lot of effort into improving power ICs for use in telecom and automotive applications, which is boosting their demand in the market.

Automotive GaN Devices Market – By Wafer Size

• 2 Inches

• 4 Inches

• 6 Inches

• 8 Inches

Based on Wafer Size, the Automotive GaN Devices Market is categorized into 2 Inches, 4 Inches, 6 Inches, and 8 Inches. The 6-inch category is anticipated to exhibit a CAGR of about 25% during the forecast period. This might be attributed to the benefits of 6-inch GaN semiconductors, such as accurate current regulation and uniform voltage supply, which have led to their expanding uses for defense equipment, wireless cellular base station power amplifiers, and automobile collision avoidance devices.

Automotive GaN Devices Market – By Application

• Lighting and Lasers

• Radio Frequency

• Power Drives

• Based on Applications, the Automotive GaN Devices Market is categorized into Lighting and Lasers, Radio Frequency, and Power Drives. The market for power drives is anticipated to have the greatest CAGR throughout the projection period. The global EV market is expanding, and there are many new participants on the scene. The main reasons propelling the growth of the GaN semiconductor device market include expanding renewable energy generation, increased EV charging and EV adoption, and rising consumer awareness. A significant driver boosting market growth is also the rise in demand for motor drives as a result of the superior performance and efficiency features provided by GaN devices in the high-voltage regions (over 400 V).

GaN technology has advanced quickly, and as a result, many businesses are introducing novel, creative products that are affordable, effective, and well-designed. Additionally, the use of GaN semiconductor devices has increased to suit the expanding need for high-power and high-temperature applications. Due to its propensity to operate at high frequencies, power densities, and temperatures while exhibiting better efficiency and linearity, these devices are frequently employed in high-voltage applications, radio frequency amplifiers, and LEDs.

Automotive GaN Devices Market - By Region:

• North America

• Europe

• Asia-Pacific

• Rest of the World

North America had the greatest revenue in the Automotive GaN Devices market in 2021. This is due to increased internet usage and widespread smartphone adoption. Due to rising R&D expenditures by the aerospace and defense industries, the region's market dominance is expanding. The Asia Pacific region is anticipated to register the greatest CAGR during the forecast period. GaN devices are gradually taking the place of their silicon equivalents in a variety of application sectors, including consumer and enterprise, telecommunications, automotive, industrial, etc. in APAC. China is the major producer and distributor of raw materials for the wide bandgap semiconductor market. APAC's market for GaN semiconductor devices is anticipated to benefit from this, increasing its revenue.

Major Key Players in the Market

1.  Efficient Power Conversion Corporation

2. NexGen Power Systems Inc.

3. NXP Semiconductor N.V.,

4. Cree, Inc.

5. Qorvo

6. Texas Instruments Inc.

7. Fujitsu Ltd.

8. GaN Systems Inc.

9.  Infineon Technologies AG

10. Freescale Semiconductor Inc.

11. Toshiba Corporation.

Notable happenings in the Automotive GaN Devices Market in the recent past:

• Product Launch- In March 2021, Four new multistage monolithic GaN-on-SiC microwave integrated circuit (MMIC) devices from Cree were released. The recently introduced products increased the company's selection of RF solutions and provide excellent power added efficiency (PAE) in compact, commercially acceptable packages. These components are made for a variety of pulsed and continuous-wave X-band phased array applications, such as radars for unmanned aerial systems, ships, and weather surveillance.

• Partnership- In April 2021, Nexperia and United Automotive Electronics Systems (UAES) entered a partnership for the production of GaN-based semiconductor devices for automotive applications.

• Product Launch- In May 2021, A brand-new line of integrated power stage (IPS) GaN power devices was introduced by Infineon Technologies. Half-bridge and single-channel solutions for low-to-medium power applications, such as adapters, chargers, and motor drives, were included in the new CoolGaN device family.

• Product Launch- In November 2021, a range of five new X-band GaN devices were unveiled by Sumitomo Electric Device Innovations USA Inc. and Sumitomo Electric Industries Ltd.

• Partnership- In November 2021, GaN Systems Inc. partnered with Universal Scientific Industrial Co. Ltd to create GaN power modules for the EV market.

• Product Launch- In November 2020, Texas Instruments Incorporated unveiled the next-generation 600V and 650V GaN field-effect transistors (FETs). These are brand-new high-voltage power management components that can be applied to both commercial and automotive settings.